? 2006 ixys corporation all rights reserved ds99634 (11/06) symbol test conditions maximum ratings v dss t j = 25 c to 175 c75v v dgr t j = 25 c to 175 c; r gs = 1 m 75 v v gsm transient 20 v i d25 t c = 25 c 200 a i lrms lead current limit, rms 75 a i dm t c = 25 c, pulse width limited by t jm 540 a i ar t c = 25 c25a e as t c = 25 c 750 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 3 v/ns t j 175 c, r g = 5 p d t c = 25 c 430 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque 1.13 / 10 nm/lb.in. weight to-3p 5.5 g to-247 6 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a75v v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v i gss v gs = 20 v, v ds = 0 v 200 na i dss v ds = v dss 5 a v gs = 0 v t j = 150 c 250 a r ds(on) v gs = 10 v, i d = 25 a, notes 1, 2 4.0 5.0 m trench gate power mosfet n-channel enhancement mode avalanche rated ixth200n075t IXTQ200N075T v dss =75 v i d25 = 200 a r ds(on) 5.0 m features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density to-3p (ixtq) preliminary technical information g d s to-247 (ixth) g s d g = gate d = drain s = source tab = drain (tab) (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixth200n075t IXTQ200N075T symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 60 a, note 1 70 110 s c iss 6800 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1040 pf c rss 190 pf t d(on) resistive switching times 31 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 25 a 57 ns t d(off) r g = 5 (external) 54 ns t f 52 ns q g(on) 160 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 25 a 35 nc q gd 43 nc r thjc 0.35 c/w r thch to-3p 0.25 c/w to-247 0.21 c/w source-drain diode symbol test conditions characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0 v 200 a i sm pulse width limited by t jm 540 a v sd i f = 25 a, v gs = 0 v, note 1 1.0 v t rr i f = 25 a, -di/dt = 100 a/ s50ns v r = 40 v, v gs = 0 v notes: 1. pulse test, t 300 s, duty cycle d 2 %; 2. on through-hole packages, r ds(on) kelvin test contact location must be 5 mm or less from the package body. to-3p (ixtq) outline pins: 1 - gate 2 - drain 3 - source 4, tab - drain to-247 ad outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2 7,071,537 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre- production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2006 ixys corporation all rights reserved ixth200n075t IXTQ200N075T fig. 1. output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 200 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 6v 5v fig. 2. extended output characteristics @ 25oc 0 50 100 150 200 250 300 350 0123456 v ds - volts i d - amperes v gs = 10v 9v 8v 6v 7v 5v fig. 3. output characteristics @ 150oc 0 20 40 60 80 100 120 140 160 180 200 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 6v 5v fig. 4. r ds(on) normalized to i d = 100a value vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 200a i d = 100a fig. 5. r ds(on) normalized to i d = 100a value vs. drain current 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 0 50 100 150 200 250 300 350 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 20 40 60 80 100 120 140 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit for to-263 (7-lead) external lead current limit for to-3p, to-220, & to-263
ixys reserves the right to change limits, test conditions, and dimensions. ixth200n075t IXTQ200N075T fig. 7. input admittance 0 30 60 90 120 150 180 210 240 270 300 3 3.5 4 4.5 5 5.5 6 6.5 7 v gs - volts i d - amperes t j = -40oc 25oc 150oc fig. 8. transconductance 0 20 40 60 80 100 120 140 160 0 50 100 150 200 250 300 350 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 350 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 q g - nanocoulombs v gs - volts v ds = 38v i d = 25a i g = 10ma fig. 11. capacitance 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2006 ixys corporation all rights reserved ixth200n075t IXTQ200N075T ixys ref: t_200n075t (5v) 6-20-06.xls fig. 14. resistive turn-on rise time vs. drain current 20 25 30 35 40 45 50 55 60 65 70 25 30 35 40 45 50 i d - amperes t r - nanoseconds r g = 5 v gs = 10v v ds = 38v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 20 30 40 50 60 70 80 90 100 110 120 130 4 6 8 101214161820 r g - ohms t r - nanoseconds 27 30 33 36 39 42 45 48 51 54 57 60 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 38v i d = 50a i d = 25a fig. 16. resistive turn-off switching times vs. junction temperature 48 49 50 51 52 53 54 55 56 57 58 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 45 50 55 60 65 70 75 80 85 90 95 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 5 , v gs = 10v v ds = 38v i d = 25a i d = 50a fig. 17. resistive turn-off switching times vs. drain current 48 49 50 51 52 53 54 55 56 57 58 25 30 35 40 45 50 i d - amperes t f - nanoseconds 45 50 55 60 65 70 75 80 85 90 95 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 5 , v gs = 10v v ds = 38v t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 20 25 30 35 40 45 50 55 60 65 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 5 v gs = 10v v ds = 38v i d = 50a i d = 25a fig. 18. resistive turn-off switching times vs. gate resistance 50 70 90 110 130 150 170 4 6 8 101214161820 r g - ohms t f - nanoseconds 60 100 140 180 220 260 300 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 38v i d = 50a i d = 25a
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